1 c xxx ez1000-s xx 000-2 chip diagram features ezbright led technology ? 380 mw min. C 450 nm ? 360 mw min. C 460 nm ? 110 mw min. C 527 nm lambertian radiation conductive epoxy, solder paste or preforms, or flux eutectic attach low forward voltage dielectric passivation across epi surface applications general illumination ? aircraft ? decorative lighting ? task lighting ? outdoor illumination white leds lcd backlighting projection displays automotive cree ? ez1000? gen ii leds data sheet c xxx ez1000-s xx 000-2 crees ezbright? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device submount technology to deliver superior value for high- intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the fux eutectic method. these vertically structured, low forward voltage led chips are approximately 170 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations. these leds are useful in a broad range of applications such as general illumination, automotive lighting, and lcd backlighting. d a t a s h e e t : c p r 3 e c r e v . a top view bottom view die cross section ezbright led 980 x 980 m 2 gold bond pads (2) 150 x 150 m 2 cathodes (-) t = 170 m anode (+) 3 m ausn backside metalization dielectric passivation subject to change without notice. www.cree.com
copyright ? 2009 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1000 and ez are trademarks of cree, inc. 2 cpr3ec rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com maximum ratings at t a = 25c note 1, 2 & 3 c xxx ez1000-s xx 000-2 dc forward current 1000 ma peak forward current (1/10 duty cycle @ 1 khz) 1250 ma led junction temperature 150c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +125c typical electrical/optical characteristics at t a = 25c, if = 350 ma note 2 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450ez1000-sxx000-2 2.9 3.2 3.8 2 20 c460ez1000-sxx000-2 2.9 3.2 3.8 2 21 c527ez1000-s xx 000-2 3.0 3.4 4.0 2 35 mechanical specifcations c xxx ez1000-s xx 000-2 description dimensions tolerance p-n junction area (m) 950 x 950 35 chip area (m) 980 x 980 35 chip thickness (m) 170 25 top au bond pad (m) - qty. 2 150 x 150 25 au bond pad thickness (m) 3.0 1.5 back contact metal area (m) 980 x 980 35 back contact metal thickness (m) 3.0 1.5 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a 3.45 x 3.45 mm smt package without an encapsulant for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree ezbright applications note for assembly-process information. 2. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics were measured in an integrating sphere using illuminance e. 3. the maximum forward current is determined by the thermal resistance between the led junction and ambient. it is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the led junction to ambient in order to optimize product performance. 0 200 400 600 800 1000 1200 25 50 75 100 125 150 175 maximum forward current (ma) ambient t emperature (?c) rth j-a = 10 c/w rth j-a = 15 c/w rth j-a = 20 c/w rth j-a = 25 c/w
copyright ? 2009 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1000 and ez are trademarks of cree, inc. 3 cpr3ec rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com standard bins for c xxx ez1000-s xx 000-2 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez1000-s xx 000-2) orders may be flled with any or all bins (c xxx ez1000-0 xxx- 2) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 350 ma. radiant fux values are measured using au-plated to39 headers without an encapsulant. c450ez1000-s38000-2 c450ez1000-0221-2 c450ez1000-0222-2 c450ez1000-0223-2 c450ez1000-0224-2 c450ez1000-0217-2 c450ez1000-0218-2 c450ez1000-0219-2 c450ez1000-0220-2 c450ez1000-0213-2 c450ez1000-0214-2 c450ez1000-0215-2 c450ez1000-0216-2 c450ez1000-0209-2 c450ez1000-0210-2 c450ez1000-0211-2 c450ez1000-0212-2 c450ez1000-0205-2 c450ez1000-0206-2 c450ez1000-0207-2 c450ez1000-0208-2 460 mw 440 mw 420 mw 400 mw 380 mw dominant wavelength radiant flux 447.5 nm 450 nm 452.5 nm 455 nm 445 nm c460ez1000-s36000-2 c460ez1000-0221-2 c460ez1000-0222-2 c460ez1000-0223-2 c460ez1000-0224-2 c460ez1000-0217-2 c460ez1000-0218-2 c460ez1000-0219-2 c460ez1000-0220-2 c460ez1000-0213-2 c460ez1000-0214-2 c460ez1000-0215-2 c460ez1000-0216-2 c460ez1000-0209-2 c460ez1000-0210-2 c460ez1000-0211-2 c460ez1000-0212-2 c460ez1000-0205-2 c460ez1000-0206-2 c460ez1000-0207-2 c460ez1000-0208-2 c460ez1000-0201-2 c460ez1000-0202-2 c460ez1000-0203-2 c460ez1000-0204-2 460 mw 440 mw 420 mw 400 mw 380 mw 360 mw dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 465 nm 455 nm c527ez1000-s11000-2 c527ez1000-0213-2 c527ez1000-0214-2 c527ez1000-0215-2 c527ez1000-0210-2 c527ez1000-0211-2 c527ez1000-0212-2 c527ez1000-0207-2 c527ez1000-0208-2 c527ez1000-0209-2 c527ez1000-0204-2 c527ez1000-0205-2 c527ez1000-0206-2 c527ez1000-0201-2 c527ez1000-0202-2 c527ez1000-0203-2 190 mw 170 mw 150 mw 130 mw 110 mw dominant wavelength radiant flux 525 nm 530 nm 535 nm 520 nm
copyright ? 2009 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1000 and ez are trademarks of cree, inc. 4 cpr3ec rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com characteristic curves these are representative measurements for the ezbright 1000. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 50% 100% 150% 200% 250% 300% 0 250 500 750 1000 1250 relative intensity if (ma) relative intensity vs. forward current - 12 - 9 - 6 - 3 0 3 6 9 12 0 250 500 750 1000 1250 dw shift (nm) if (ma) wavelength shift vs. forward current 0% 50% 100% 150% 200% 250% 300% 0 250 500 750 1000 1250 relative intensity if (ma) relative intensity vs. forward current - 12 - 9 - 6 - 3 0 3 6 9 12 0 250 500 750 1000 1250 dw shift (nm) if (ma) wavelength shift vs. forward current 0 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage - 0.600 - 0.500 - 0.400 - 0.300 - 0.200 - 0.100 0.000 0.100 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs. junction temperature 0 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage - 0.600 - 0.500 - 0.400 - 0.300 - 0.200 - 0.100 0.000 0.100 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs. junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) wavelength shift vs. junction temperature 65% 70% 75% 80% 85% 90% 95% 100% 105% 110% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative intensity vs. junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) wavelength shift vs. junction temperature 65% 70% 75% 80% 85% 90% 95% 100% 105% 110% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative intensity vs. junction temperature
copyright ? 2009 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1000 and ez are trademarks of cree, inc. 5 cpr3ec rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com radiation pattern this is a representative radiation pattern for the ezbright power chip led product. actual patterns will vary slightly for each chip.
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